Passivation Glass
Customizable granularities to meet your specific needs
Zinc-based glass maintains stable surface charge density during BT treatment with DC bias and temperature, ensuring highly reliable devices. Additionally, lead-based glass offers exceptional chemical durability, making it ideal for transistors, thyristors, and diodes that form electrodes with nickel plating.
Properties
| Properties/Glass cord | GP-014 | GP-031 | GP-5210 | GP-180 | GP-190 | GP-200 | GP-230 | ||
|---|---|---|---|---|---|---|---|---|---|
| Particle size*1 | 350 | 350 | 350 | S | S | S | S | ||
| Coefficient of thermal expansion | 30~300℃ | ×10-7/K | 43 | 36 | 33 | 44.5 | 43.5 | 44 | 41.5 |
|
Transition point |
℃ | 550 | 535 | 550 | 590 | 620 | 595 | 610 | |
| Softening point | ℃ | 650 | 635 | 635 | 775 | 810 | 780 | 830 | |
|
Density |
×103kg/m3 | 3.78 | 3.93 | 3.84 | 3.87 | 3.81 | 3.78 | 3.58 | |
|
Alkali content |
Na2O | ppm | ≦20 | ≦20 | ≦20 | ≦30 | ≦30 | ≦30 | ≦30 |
| K2O | ppm | ≦10 | ≦10 | ≦10 | ≦10 | ≦10 | ≦10 | ≦10 | |
| Li2O | ppm | ≦5 | ≦5 | ≦10 | ≦10 | ≦10 | ≦10 | ≦10 | |
| Application (reverse breakdown voltage level)*2 |
Low pressure |
Low pressure |
High pressure |
Medium pressure |
Medium pressure |
Medium pressure |
Medium pressure |
||
| Surface charge density*3 | ×1011/cm2 | 0~+1 | 0~+1 | +6~+7 | +7~+8 | +15~+16 | +6~+7 | +7~+8 | |
|
Composition system |
ZnO・B2O3・SiO2 | ZnO・B2O3・SiO2・PbO | PbO・SiO2・Al2O3 | ||||||
| Properties/Glass cord | GP-605 | GP-620 | GP-350 | GP-370 | GP-380 | GP-390 | ||
|---|---|---|---|---|---|---|---|---|
| Particle size*1 | S | S | S | S | S | S | ||
| Coefficient of thermal expansion | 30~300℃ | ×10-7/K | 44 | 43 | 46.5 | 42.0 | 44.5 | 43 |
| Transition point | ℃ | 590 | 620 | 470 | 475 | 535 | 540 | |
| Softening point | ℃ | 790 | 810 | 645 | 680 | 740 | 740 | |
| Density | ×103kg/m3 | 3.84 | 3.76 | 3.53 | 3.32 | 3.61 | 3.54 | |
| Alkali content | Na2O | ppm | ≦30 | ≦30 | ≦30 | ≦30 | ≦30 | ≦30 |
| K2O | ppm | ≦10 | ≦10 | ≦30 | ≦10 | ≦10 | ≦10 | |
| Li2O | ppm | ≦10 | ≦10 | ≦10 | ≦10 | ≦10 | ≦10 | |
| Application (reverse breakdown voltage level)*2 | High pressure | High pressure |
Low pressure |
Medium pressure |
Medium pressure |
High pressure | ||
| Surface charge density*3 | ×1011/cm2 | +11~+12 | +14~+15 | +2~+3 | +5~+6 | +6~+7 | +14~+15 | |
| Composition system | PbO・SiO2・Al2O3 | PbO・B2O3・SiO2・Al2O3 | ||||||
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350: Dmax 44µm, D50 16µm; S: Dmax 44µm, D50 7.5µm
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Comparison based on our internal criteria. Please use this as a reference for selecting glass.
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Silicon side
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